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A Product Line of
Diodes Incorporated
DMN2300UFB4
1.7
V GS = 2.5V
I D = 500mA
0.6
1.5
1.3
V GS = 4.5V
I D = 1.0A
0.5
0.4
V GS = 1.5V
I D = 50mA
V GS = 1.8V
I D = 100mA
V GS = 1.8V
I D = 100mA
1.1
V GS = 1.5V
0.3
0.9
I D = 50mA
0.2
V GS = 4.5V
0.7
0.1
V GS = 2.5V
I D = 1.0A
I D = 500mA
0.5
-50
-25 0 25 50 75 100 125 150
0
-50
-25 0 25 50 75 100 125 150
1.2
1.0
T A , AMBIENT TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
2.0
1.6
T A , AMBIENT TEMPERATURE (°C)
Figure 8 On-Resistance Variation with Temperature
0.8
I D = 1mA
1.2
T A = 25°C
0.6
I D = 250μA
0.8
0.4
0.2
0.4
0
-50 -25 0 25 50 75 100 125 150
0
0
0.2 0.4 0.6 0.8 1.0 1.2
T A , AMBIENT TEMPERATURE (°C)
Figure 9 Gate Threshold Variation vs. Ambient Temperature
1,000
100,000
V SD , SOURCE-DRAIN VOLTAGE (V)
Figure 10 Diode Forward Voltage vs. Current
T A = 125°C
10,000
T A = 150°C
100
1,000
T A = 125°C
T A = 85°C
100
T A = 85°C
T A = 25°C
10
T A = 25°C
T A = -55°C
10
T A = -55°C
1
2
4
6 8 10 12 14 16 18
20
1
2
4 6 8 10 12
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 11 Typical Leakage Current
vs. Drain-Source Voltage
V GS , GATE-SOURCE VOLTAGE (V)
Figure 12 Leakage Current vs. Gate-Source Voltage
DMN2300UFB4
Document number: DS35269 Rev. 4 - 2
4 of 7
www.diodes.com
September 2012
? Diodes Incorporated
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